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ugg italia Ion probe measurement sensitivity _1052

 
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PostPosted: Sun 2:08, 12 Dec 2010    Post subject: ugg italia Ion probe measurement sensitivity _1052

Ion probe measurement sensitivity


l1 position, recording the ion current J as a function of time f, and then through proper calibration, the curve of the vertical axis Zhang J abscissa converted into concentration depth z, and then you can calculate the sensitivity. Advantage of this approach are: (1) still use the small B ions for the interference signal j (2) sample preparation convenient and simple. Its shortcomings are as follows; (1) the depth of analysis has a lot of interference and influence factors such as edge effect, re-sedimentation and storage effect, recoil depression eight and so on. (2) by the ion beam current density J and time t into r / and depth z in the process, it is difficult to accurately convert, will bring the second calculation error} In addition, the depth of analysis requires a longer time, increasing the impact of the instability. For these reasons, the actual accuracy will not be very high. (3) To determine the sensitivity values, still need to be made very small amount of boron in the corresponding distribution curve, which still put pollution problem of interference, its impact is great. IV Conclusion By analyzing and comparing, we believe that the pure silicon sample signal to noise ratio method is more reliable and convenient method, which measured the main elements of the sample is pure, put the impact of pollution much smaller, relatively speaking, on the sample preparation no special requirements,[link widoczny dla zalogowanych], therefore, sample preparation,[link widoczny dla zalogowanych], preservation, storage and transportation problems, are not sophisticated electronics components present in a large scale has been done with good linearity, making it not become a major error of measurement accuracy In this regard, the use of static SIMS aluminum, molybdenum, iron and other samples of secondary ion count 'i went with pure silicon samples have the same advantages of signal to noise ratio method. But for a single count of a sample of the secondary ion sensitivity of the general level of equipment is difficult to see, between the different instruments can only relatively. We feel that unity for all secondary ion mass spectrometry to determine a detection capability of boron in silicon for comparison is useful, and pure silicon sample signal to noise ratio law in this regard will be much more convenient. This surface analytical instruments in the present there is no satisfactory quantitative physical model reasonable case, the first unified standard materials,[link widoczny dla zalogowanych], standard spectra and standard data and standard measurement method, can be more accurate quantitative analysis as a basis for independently judge, not just complementary analysis. A 317 - [1 [2 [3 [4 References Wang Li, etc., Scientific Instrument, 5,2 (1984), [31 Wang Li, Mass Spectrometry, 8,4 (1987), 15STatyeta1. . Int. J. Masssectrom. IonPhys. . 27 (1979), 53. Tin or two third-class,[link widoczny dla zalogowanych], quality analysis, 19,2 (1971), 88MeasuringMethodsoftheSensitivityofIonMicroprobeMassAnalyzerWangLiAbstract-'_ - Thispaperdescribesthesensitivityilleasure ~ lentofionmicroprobemassanalyzer. Themethodofsignal-to-noiseratioofpuresiliconsample, intheopinionoftheauthor,[link widoczny dla zalogowanych], isevenbetterthanothermethods. Corrigendum No. 3 in 1990 publication of \and readers to apologize. 229 pages down the line error is 10D3J (26) D3J: (26) 230 S & P down 2l Pulse Xi Qu i) Tong: n,, LL, 3trig () Dr, L230 down l6 ... ... h () .... \H (port) ... \() E |】 succinic () e, 2H (oral) 2316H ・ J (Ⅱ) Shí H '(g) J () gH \, 2H Ⅲ (g) 1J: () zH. (q) Ⅱ J () Shí H (g) Ⅱ J. () qH (g) 23l12zh2db23221, 2,232 down 3l5.53370l5.95370233 down 7J: (port) = 0L ( ) = 0233 down 6 V: 2:233 pour 2 (a to + (one death) + Old One 318 -

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